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| savantic semiconductor product specification silicon pnp power transistors 2SA738 d escription with to-126 package high current complement to type 2sc1368 applications driver stages in high-fidelity amplifiers and television circuits pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -25 v v ceo collector-emitter voltage open base -25 v v ebo emitter -base voltage open collector -5 v i c collector current -1.5 a i cm collector current-peak -2.0 a p t total power dissipation t c =25 8 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA738 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -25 v v cesat collector-emitter saturation voltage i c =-0.5a; i b =-50ma -0.5 v v be base-emitter voltage i c =-500ma ; v ce =-2v -1.0 v i cbo collector cut-off current v cb =-25v; i e =0 -1.0 a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 a h fe-1 dc current gain i c =-150ma ; v ce =-2v 35 320 h fe-2 dc current gain i c =-500ma ; v ce =-2v 25 f t transition frequency i c =-50ma; v ce =-5v 160 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2SA738 package outline fig.2 outline dimensions |
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